nov-27-2003 1 bcr101... npn silicon digital transistor ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor ( r 1 = 100k ? , r 2 = 100k ? ) bcr101f/l3 bcr101t eha07184 3 2 1 c e b r 1 r 2 type marking pin configuration package bcr101f* BCR101L3* bcr101t* ucs uc ucs 1=b 1=b 1=b 2=e 2=e 2=e 3=c 3=c 3=c - - - - - - - - - tsfp-3 tslp-3-4 sc75 *preliminary maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 emitter-base voltage v ebo 10 input on voltage v i(on) 50 collector current i c 50 ma total power dissipation- bcr101f, t s 128c BCR101L3, t s 135c bcr101t, t s 109c p tot 250 250 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150
nov-27-2003 2 bcr101... thermal resistance parameter symbol value unit junction - soldering point 1) bcr101f BCR101L3 bcr101t r thjs 90 60 165 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - collector-base cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 10 v, i c = 0 i ebo - - 75 a dc current gain 2) i c = 5 ma, v ce = 5 v h fe 70 - - - collector-emitter saturation voltage 2) i c = 5 ma, i b = 0.25 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.5 - 1.8 input on voltage i c = 1 ma, v ce = 0.3 v v i(on) 1 - 3 input resistor r 1 70 100 130 k ? resistor ratio r 1 / r 2 0.9 1 1.1 - ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1 for calculation of r thja please refer to application note thermal resistance 2 pulse test: t < 300s; d < 2%
nov-27-2003 3 bcr101... dc current gain h fe = ? ( i c ) v ce = 5 v (common emitter configuration) 10 -4 10 -3 10 -2 10 -1 a i c 1 10 2 10 3 10 h fe collector-emitter saturation voltage v cesat = ? ( i c ), h fe = 20 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 v 0.5 v cesat -4 10 -3 10 -2 10 -1 10 a i c input on voltage v i (on) = ? ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -5 10 -4 10 -3 10 -2 10 -1 10 a i c input off voltage v i(off) = ? ( i c ) v ce = 5v (common emitter configuration) 0.5 1 1.5 2 2.5 3 v 4 v i(off) -6 10 -5 10 -4 10 -3 10 -2 10 a ic
nov-27-2003 4 bcr101... total power dissipation p tot = ? ( t s ) bcr101f 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) BCR101L3 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) bcr101t 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible puls load r thjs = ? ( t p ) bcr101f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
nov-27-2003 5 bcr101... permissible pulse load p totmax / p totdc = ? ( t p ) bcr101f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) BCR101L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) BCR101L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr101t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
nov-27-2003 6 bcr101... permissible pulse load p totmax / p totdc = ? ( t p ) bcr101t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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